I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain.
Responsibilities will include but are not limited to:
* Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs.
* Perform circuit-level design, simulation, and layout for RF ICs.
* Optimize amplifier performance for efficiency, linearity, and power output.
* Conduct EM simulations and RF measurements to validate designs.
* Work closely with process engineers and layout teams to ensure design manufacturability.
* Collaborate with system architects to define specifications and system integration.
* Support product validation, characterization, and troubleshooting.
I am looking for an individual with experience in some of the following areas:
* Experience in RF IC design, with a strong focus on GaN technology.
* Hands-on expertise in power amplifier and LNA design.
* Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects.
* Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools.
* Experience with wafer-level characterization and measurement techniques.
* Knowledge of RF packaging, parasitic extraction, and layout considerations.
* Strong problem-solving skills and the ability to work independently.
* Excellent communication skills in English.
To be considered for this position, you must have experience in GaN-based RF solutions.
No visa sponsorship is available.
Please get in touch with Parm Shergill for more information.